SKU:43955350051

InP-VGF- (100) S doped, 10x10x0.5mm wafer, 2sp - IPSa101005S2US

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Regular price $113.85 USD
Regular price $133.85 USD Sale price $113.85 USD
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Ships within 48 hours · Estimated delivery Jul 14 - Jul 19

Description

InP-VGF- (100) S doped, 10x10x0.5mm wafer, 2sp - IPSa101005S2USInP single crystal wafer Growing Method: VGF Orientation: (100) Size: 10x10 x 0. 5 mm Doping: S doped Conducting type: S C N Polish: one side polished Resistivity: (1. 8 2. 0)x10^ 3 ohm. cm Mobility: 1850 1870 cmE2 V. S EPD: <2000 cmE2 Carrier Concerntration: (1. 7 1. 9) x10^18 cm^3 Ra(Average Roughness) : < 0. 4 nm

2 PTFE O-rings

PTL-NM01 dip coaters

MTI diamond blade is hot pressed and sintered by full diamond powder which provides five times longer service life than that of regular edge sintered diamond blades

Wafer size: 10 mm x 10 mm  x 1

Do not clean the Al clad case with ultrasonic cleaners

and solvent resistance of fluorocarbons

Assembly of Li-Air Batteries

Minimum voltage change interval: 10 mV

ID:      152 mm

Compact design with two sets of stainless steel reservoirs and peristaltic pumps prevent cross contaminations between cathode and anode slurries

Size:                             2" dia x 2

Precaution: R-plane sapphire wafer is easy to cleave compared with C plane's

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