SKU:43955350051
InP-VGF- (100) S doped, 10x10x0.5mm wafer, 2sp - IPSa101005S2US
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- USA
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Ships within 48 hours · Estimated delivery Jul 14 - Jul 19
Description
InP-VGF- (100) S doped, 10x10x0.5mm wafer, 2sp - IPSa101005S2USInP single crystal wafer Growing Method: VGF Orientation: (100) Size: 10x10 x 0. 5 mm Doping: S doped Conducting type: S C N Polish: one side polished Resistivity: (1. 8 2. 0)x10^ 3 ohm. cm Mobility: 1850 1870 cmE2 V. S EPD: <2000 cmE2 Carrier Concerntration: (1. 7 1. 9) x10^18 cm^3 Ra(Average Roughness) : < 0. 4 nm
2 PTFE O-rings
PTL-NM01 dip coaters
MTI diamond blade is hot pressed and sintered by full diamond powder which provides five times longer service life than that of regular edge sintered diamond blades
Wafer size: 10 mm x 10 mm x 1
Do not clean the Al clad case with ultrasonic cleaners
and solvent resistance of fluorocarbons
Assembly of Li-Air Batteries
Minimum voltage change interval: 10 mV
ID: 152 mm
Compact design with two sets of stainless steel reservoirs and peristaltic pumps prevent cross contaminations between cathode and anode slurries
Size: 2" dia x 2
Precaution: R-plane sapphire wafer is easy to cleave compared with C plane's
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