SKU:55991483367

Si Wafer (100), 4 " dia x 0.275 mm, P Type B doped, 1SP, Resistivities: 0.5 - 2.0 ohm-cm

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Regular price $106.88 USD
Regular price $154.88 USD Sale price $106.88 USD
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Ships within 48 hours · Estimated delivery Jul 14 - Jul 19

Description

Si Wafer (100), 4 " dia x 0.275 mm, P Type B doped, 1SP, Resistivities: 0.5 - 2.0 ohm-cmSingle Crystal: Si Growth Method: CZ Type Dopant: P Boron Orientation: (100) Resistivity: 0. 5 2. 0 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Diameter: 100 mm Thickness: 0. 275 mm + 0. 020 mm Primary Flat: <110> Polish: One side polished Minority Carrier Lifetime: 100 us Optional: you may need tool below to handle the wafer ( click picture to order ) Other

Resistivity:              > 5000 ohm-cm

It does this by creating an obstructive path for the oil using the curve of its wall

Pumping of corrosive or explosive media

Size:                          4" diameter x 0

6% PVDF in NMP)

please click pictures 3-4 below)

000 PSI adjust relief valve is available upon request

27 Tap Density (g/cm³)

mso-pagination:widow-orphan

Crystal:                       Zn doped CdTe

serious damages can be caused by the spooler driving mechanism

Coupling Constant

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