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SKU:62996206879
Ge Wafer (110) N-type Undoped, 4" dia x 0.5 mm, 2SP,R>50ohm.cm - GEUe101D05C2R50US
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USA
- USA
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- USA
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
Ge Wafer (110) N-type Undoped, 4" dia x 0.5 mm, 2SP,R>50ohm.cm - GEUe101D05C2R50USGe Wafer Specification Growing Method: CZ Orientation: (110) + 0. 5 Deg. Wafer Size: 4" dia x 500 microns Surface Polishing: two sides epi polished Surface roughness: < 30 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties of Ge Crystal Structure:
Resistivity: (0
item is sold in quantities of 1 pc for the unit price shown
Precaution: R plane sapphire wafer is easy to cleave compared with C plane's
The SiC blade fit with MTI SYJ-150 low speed saw or other brand of low speed saw
Mobility:4120-5860 cm^2/V
Detail image on SFM-3 Acrylic Jar can be perfectly used on the EQ-SFM-3 to mill materials
5mm(ID) x 68mm(H)
The time settings of the temperature controller are in seconds
Surface Quality: 80/50
Maximum Current: 40 A
Type of conductivity: P-type
The full diamond sintered blade is suitable for low-speed cutting ( under 1000 RPM) of oxide single crystals or any brittle crystals
Quick Dispatch:
Your Ge Wafer (110) N-type Undoped, 4" dia x 0.5 mm, 2SP,R>50ohm.cm - GEUe101D05C2R50US orders ship within 1-2 business days.
Delivery Options:
- Standard: 3-7 business days
- Fast: 2-3 business days
- Express: 1-2 business days
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Exchange/Return Notes
- We offer a 30-day return/exchange service after receiving.
- Final sale items are not eligible for returns or exchanges.
- To process your return/exchange, please contact us at [email protected]
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