SKU:13324762358
Si Wafer (111) 4 +/- 0.5 degree off , 4 " dia x 0.5 mm, 1SP, P Type, B doped, resistivity: 0.004-0.006 ohm-cm
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USA
- USA
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- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 14 - Jul 19
Description
Si Wafer (111) 4 +/- 0.5 degree off , 4 " dia x 0.5 mm, 1SP, P Type, B doped, resistivity: 0.004-0.006 ohm-cmSingle crystal Si, (CZ) Conductivity: P type ( B doped) Resistivity: 0. 004 0. 006 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 4" in diameter x 0. 5mm Orientation: (111) 4 + 0. 5 degree off Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner
The prismatic cell tray is shown in Pic
(4 pins per one feed through)
Polished: two sidespolished
56 g/cm³ Ionic conductivity (cold pressing)
MSK-T-10 is a compact disc cutter with quality sliding rail with ball bearing for precision cutting
Surface roughness: < 8 A ( by AFM)
A high voltage power supply (Pic 2)
One pipette tip-sample pack (single channel only)
Replacement blade for aluminum alloy flange (not included) with 0
Mobility:1790-1980 cm^2/v
One KF25 clamp set
Surface finish (RMS or Ra) : < 8A
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