SKU:31394098376
InSb (100) 2" dia x 0.45 mm, P type, Ge doped, 1 sided polished, carrier conc: (0.5-5.0)x10^17/cc - ISGea50D045C1US
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Ships within 48 hours · Estimated delivery Jul 14 - Jul 19
Description
InSb (100) 2" dia x 0.45 mm, P type, Ge doped, 1 sided polished, carrier conc: (0.5-5.0)x10^17/cc - ISGea50D045C1US2" InSb wafer (P type, Ge doped ) Size: 2" dia x 0. 45mm thick Orientation: <100> + 0. 5 o Polishing: one side polishd Packing: Sealed in nitrogen in single wafer container at 1000 class clean room Properties Growth method LEC Orientation (100) + 0. 5 o Orientation Flat N A Doping Ge Conductivity type P Type Carrier Concentration (0. 5 5. 0) x10^17 cc @77K Mobility > (4. 0 8. 4)x10^3 cm2 Vs EPD <200 cm 2
Key Equipment List
Thickness: 9 um (-0
20mL syringe is used to contain the coating material
Dimension: 10 mm x 10
3Mpa/ 180ºC (Reference only)
Please click here to see XRD Rocking curve of GaN template
lifetime support is provided
Minor Flat Orientation: <0-11>
One 8" Polyamide Foam polishing Pad included for final polishing (please click picture left-2 to order spare)
0 to 50°C
Other Crystal wafer A-Z
Air permeability
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