SKU:71904575090
InAs (100), S-doped 2" dia x 0.5 mm, one side polished,cc:(1-30)E17/ cm^3 - IASa50D05C1US
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Ships within 48 hours · Estimated delivery Jul 15 - Jul 20
Description
InAs (100), S-doped 2" dia x 0.5 mm, one side polished,cc:(1-30)E17/ cm^3 - IASa50D05C1US2" InAs wafer (Ntype) 2" InAs wafer (S doped, Ntype) Size: 2" dia x 500 micron + 25 microns Orientation: <100> + 0. 50 Polishing: One side polishd Packing: in 1000 class clean room with wafer container Properties Growth method LEC Orientation (100) + 0. 5 o Orientation Flat SEMI Doping S doped Conductivity type N type Carrier Concentration (1 30)x10^17 cm3 EPD <50000 cm^ 2 Resistivity: Mobility: <10000 cm^2 vs
Morphology: faceted (major) and rod (minor)
Customized size assembling is available upon request
Flow rate depends on drive rpm and tubing size
GaN single crystal substrates is made by a hydride vapor phase epitaxy (HVPE)-based method
Operating System Windows 8
because it has a lapped glass surface and < flatness of +/- 2 microns
Doping: Undoped
Sellenmeyer equation: ηo2 -1 =3
Standard Size
Hexagonal a=5
67mm Height = 3
Please use our 3'' Dia
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