SKU:67565100325
InP-(VGF- Grown) (100) S doped, 2"x0.5mm wafer, 1sp
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- USA
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- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 15 - Jul 20
Description
InP-(VGF- Grown) (100) S doped, 2"x0.5mm wafer, 1spInP single crystal wafer Growing Method: VGF Orientation: (100) Size: 2" diameter x 0. 5 mm Doping: S doped Conducting type: S C N Polish: one side polished Resistivity: (1. 8 2. 0)x10^ 3 ohm. cm Mobility: 1850 1870 cmE2 V. S EPD: <2000 cmE2 Carrier Concerntration: (1. 7 1. 9) x10^18 cm^3 Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing
Hot Press (eg: MSK-131-HS8)
instead of using a thin sheet of nickel to capture graphene
75 H mm (46
and an Alumina Crucible Lid (45mm dia)
3mm(OD) x 15
(+/- 10%) with roughness: ~10 nm RMS as measured by the Wyko (white light interferometer) for 50 umx50um area
Detailed dimension drawing Warning Do NOT use an alumina tube under a vacuum at a temperature > 1500 °C
Example 5% carbon+ polymer
Speed accuracy: +/- 5 rpm
EQ-TP1-PTFE
3/8" OD larger diameter Alumina tube is made by high purity 99
45 mm InSb wafer (P type
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